Intel is re-entering the memory market by collaborating with SoftBank’s Saimemory subsidiary to develop a new memory technology known as Z-Angle Memory (ZAM). This decision follows Intel’s discontinuation of its Optane memory product four years ago. The ZAM technology aims to offer a new solution for AI-focused applications, set to compete with existing High Bandwidth Memory (HBM) used in data centers.
The development of ZAM memory commenced under the Department of Energy’s Advanced Memory Technology (AMT) program, specifically within the Next Generation DRAM Bonding project. Saimemory, established in December 2024, is dedicated to creating innovative semiconductor memory technologies that focus on AI enhancements. The company’s leadership includes Hideya Yamaguchi, a veteran in semiconductor technology, and Stephen Morein, formerly an engineer at Intel.
Although the announcement has generated buzz, industry experts are skeptical about the timeline. Intel’s plans include starting operations in the first quarter of 2026, with prototypes expected to debut in 2027. Commercial availability is projected only by 2030. Analysts point out that this timeline is ambitious, reminding stakeholders that meaningful products will likely remain years away.
Jim Handy, president of Objective Analysis, highlighted the premature nature of the announcement, questioning the company’s assurances about the success of this new memory technology without clear production timelines.
For more details, refer to the full announcement from Intel here.
